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詹义强
E-Mail:yqzhan@fudan.edu.cn
Date of Employment:2011-01-02
School/Department:未来信息创新学院
Education Level:研究生毕业
Degree:博士学位
Status:Employed
Academic Titles:教师
Discipline: Microelectronics and Solid State Electronics
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Academic Achievements
Effect of tantalum doping on SnO2 electron transport layer via low temperature process for perovskite solar cells
Dec 30, 2021
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Journal:
APPLIED PHYSICS LETTERS
Document Code:
SY114900
Volume:
115
Issue:
14
Translation or Not:
no
Date of Publication:
Jan 1, 2019
Pre One: Aerosol jet printed silver nanowire transparent electrode for flexible electronic application
Next One: Materials capability and device performance in flexible electronics for the Internet of Things
Dec 30, 2021
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