Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
发布时间：2026-10-22
点击次数：
- 发表刊物：
- APPLIED PHYSICS LETTERS
- 编号：
- A20261008-00024
- 卷号：
- 82
- 期号：
- 14
- 页面范围：
- 2251-2253
- 是否译文：
- 否
- 发表时间：
- 2003-01-01
- 上一条：Direct determination of strain and composition profiles in SiGe islands by anomalous X-ray diffraction at high momentum transfer -: art. no. 066105
- 下一条：Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction