Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10-10Ω·cm2contact resistivity achieved on Ga doped Ge using nanosecond laser activation
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- 发表刊物:TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
- 编号:SY126310
- 页面范围:22.4.1-22.4.4
- 是否译文:否
- 发表时间:2018-01-01
- 发表时间:2018-01-01