蒋玉龙中文主页--论文成果

教授

所在单位：微电子学院
学历：研究生毕业
性别：男
学位：博士学位
职称：教授
在职信息：在职
学科：微电子学与固体电子学

论文成果

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[1] 蒋玉龙, 复旦大学微电子学专业特色的挖掘与拓展 -中国大学教学 -2012-01-01
[2] Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode -IEEE Electron Device Letters -2015-01-01 -36
[3] Thermal Stability Improvement Induced by Laser Annealing for 50-angstrom Ni(Pt) Film Silicidation -IEEE Transactions on Electron Devices -2016-01-01 -63
[4] TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2 x 10(-9) Omega cm(2) Contact Resis... -IEEE Transactions on Electron Devices -2017-01-01 -64
[5] Sub-10-9Ω·cm2contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation -DIGEST OF TECHNICAL PAPERS - SYMPOSIUM ON VLSI TECHNOLOGY -2017-01-01
[6] Preface -19Th International Workshop on Junction Technology, Iwjt 2019 -2019-01-01
[7] Maskless metal patterning by meniscus-confined electrochemical etching and its application in org... -Organic Electronics -2021-01-01 -96
[8] Schottky barrier height lowering induced by CoSi2 nanostructure -Applied Physics A-Materials Science & Processing -2010-01-01 -99
[9] The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void form... -Microelectronic Engineering -2010-01-01 -87
[10] 蒋玉龙, 有效利用在线课程,实现原位翻转课堂的大学新教学 -中国教育信息化·高教职教 -2018-01-01
[11] Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon -IEEE Electron Device Letters -2017-01-01 -38
[12] KrF Photoresist Profile Modulation by NH3 Plasma Treatment for 28 nm SRAM -IEEE Transactions on Semiconductor Manufacturing -2018-01-01 -31
[13] Significant Threshold Voltage Shift Induced by Ge Penetration into PMOSFET Channel of 28-nm SRAM -IEEE Electron Device Letters -2019-01-01 -40
[14] Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMO... -IEEE Electron Device Letters -2019-01-01 -40
[15] A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Tec... -IEEE Electron Device Letters -2019-01-01 -40

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