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[1] 复旦大学微电子学专业特色的挖掘与拓展 中国大学教学, 2012, 35-36;60
[2] Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode IEEE Electron Device Letters, 2015, 36(6): 597-599
[3] Thermal Stability Improvement Induced by Laser Annealing for 50-angstrom Ni(Pt) Film Silicidation IEEE Transactions on Electron Devices, 2016, 63(2): 751-754
[4] TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2 x 10(-9) Omega cm(2) Contact Resis... IEEE Transactions on Electron Devices, 2017, 64(2): 500-506
[5] Sub-10-9Ω·cm2contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation DIGEST OF TECHNICAL PAPERS - SYMPOSIUM ON VLSI TECHNOLOGY, 2017, T214-T215
[6] Preface 19TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, IWJT 2019, 2019,
[7] Maskless metal patterning by meniscus-confined electrochemical etching and its application in org... Organic Electronics, 2021, 96:
[8] Schottky barrier height lowering induced by CoSi2 nanostructure APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99(1): 93-98
[9] The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void form... MICROELECTRONIC ENGINEERING, 2010, 87(12): 2535-2539
[10] 有效利用在线课程,实现原位翻转课堂的大学新教学 中国教育信息化·高教职教, 2018, 28-35
[11] Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon IEEE ELECTRON DEVICE LETTERS, 2017, 38(7): 843-846
[12] KrF Photoresist Profile Modulation by NH3 Plasma Treatment for 28 nm SRAM IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 31(2): 266-269
[13] Significant Threshold Voltage Shift Induced by Ge Penetration into PMOSFET Channel of 28-nm SRAM IEEE ELECTRON DEVICE LETTERS, 2019, 40(1): 87-90
[14] Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMO... IEEE ELECTRON DEVICE LETTERS, 2019, 40(5): 777-779
[15] A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Tec... IEEE ELECTRON DEVICE LETTERS, 2019, 40(5): 738-741
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