Zhong Zhenyang Home--Academic Achievements

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钟振扬

教授 Supervisor of Doctorate Candidates

Name (Pinyin):Zhong Zhenyang
E-Mail:zhenyangz@fudan.edu.cn
Date of Employment:2006-03-16
School/Department:物理学系
Education Level:研究生毕业
Business Address:复旦大学江湾物理楼S330
Gender:Male
Degree:博士学位
Professional Title:教授
Status:Employed
Academic Titles:教师
Discipline: Condensed Matter Physics

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Academic Achievements

Zhong, Zhenyang,Yang, Jingpu；Huang, Qiang；Luo, Wei；Zhan, Yan；Liu, Zitong；Jiang, Zuimin；Zhong, Zhenyang, Innovative concave SiGe/Ge microdisk directly on Si substrates -Applied Physics Letters -2025-01-01 -127
Zhong, Zhenyang,Zhan, Yan；Huang, Qiang；Luo, Wei；Yang, Jingpu；Jiang, Zuimin；Zhong, Zhenyang, Edge Conductance of Artificial Graphene Nanoribbons with Deterministic Chiral Edges on Si Substrates -ACS Applied Nano Materials -2025-01-01 -8
Zhong, Zhenyang,Luo, Wei；Yin, Yang；Huang, Qiang；Yang, Jingpu；Zhan, Yan；Liu, Zitong；Jiang, Zuimin；Zheng, Changlin；Zhong, Zhenyang, Engineering Properties of GeSi Alloy Quantum Dots by High-Temperature Annealing -Nanomaterials -2026-01-01 -16
Zhong Zhengyang,Jiang Yuwen；Jiang Zuimin；Mo Delin；Hu Xiaofeng；Wang Shuguang；Chen Yulu；Lin Dongdong；Fan Yongliang；Yang Xinju；Zhong Zhengyang, Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars -AIP Advances -2016-01-01 -6
Zhong Z.,Richard M.-I.；Malachias A.；Schuelli T.U.；Favre-Nicolin V.；Zhong Z.；Metzger T.H.；Renaud G., Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands -APPLIED PHYSICS LETTERS -2015-01-01 -106
Zhong Z.,Ma Y.J.；Zeng C.；Zhou T.；Huang S.F.；Fan Y.L.；Zhong Z.；Yang X.J.；Xia J.S.；Jiang Z.M., Ordering of low-density Ge quantum dot on patterned Si substrate -JOURNAL OF PHYSICS D-APPLIED PHYSICS -2014-01-01 -47
Zhong Z.,Ma Y.J.；Zhong Z.；Yang X.J.；Fan Y.L.；Jiang Z.M., Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate -NANOTECHNOLOGY -2013-01-01 -24
Zhong Z.,Cui J.；Lv Y.；Yang X.J.；Fan Y.L.；Zhong Z.；Jiang Z.M., Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy -NANOTECHNOLOGY -2011-01-01 -22
Zhong Z.,Brehm M.；Suzuki T.；Fromherz T.；Zhong Z.；Hrauda N.；Hackl F.；Stangl J.；Schaeffler F.；Bauer G., Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations -NEW JOURNAL OF PHYSICS -2009-01-01 -11
Zhong, Z.,Richard, Marie-Ingrid；Favre-Nicolin, Vincent；Renaud, Gilles；Schuelli, T. U.；Priester, C.；Zhong, Z.；Metzger, T. -H., Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays -APPLIED PHYSICS LETTERS -2009-01-01 -94

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