Observation of Contact Resistivity Independence from Schottky Barrier Height on Heavily Doped P-type SiGe
- 点击次数：
- 发表刊物：2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY(ICSICT) PROCEEDINGS
- 编号：SR3904
- 页面范围：525-527
- 是否译文：否
- 发表时间：2016-01-01
- 发表时间：2016-01-01
