Observation of Contact Resistivity Independence from Schottky Barrier Height on Heavily Doped P-type SiGe
- 点击次数：
- 发表刊物：2016 13Th IEEE International Conference on Solid-State and Integrated Circuit Technology(Icsict) Proceedings
- 论文编号：SR3904
- 页面范围：525-527
- 是否译文：否
- 发表时间：2016-01-01
- 发表时间：2016-01-01
