The EL properties of well-aligned n-ZnO nanorods / p-GaN structure
- 点击次数:
- 发表刊物:ICSICT-2010 - 2010 10TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY, PROCEEDINGS
- 编号:SY125790
- 页面范围:1244-1246
- 是否译文:否
- 发表时间:2010-01-01
- 发表时间:2010-01-01