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论文成果

Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

发布时间:2021-05-31点击次数:
  • 发表刊物: Scientific Reports
  • 编号: SY110349
  • 卷号: 6
  • 是否译文:
  • 发表时间: 2016-01-01