第一作者论文：
1. K. Zhu†, S. Pazos†, F. Aguirre, Y. Shen, Y. Yuan, W. Zheng, O. Alharbi, M. A. Villena, B. Fang, X. Li, A. Milozzi, M. Farronato, M. Muñoz-Rojo, T. Wang, R. Li, H. Fariborzi, J. B. Roldan, G. Benstetter, X. Zhang, H. Alshareef, T. Grasser, H. Wu, D. Ielmini, M. Lanza*, Hybrid 2D/CMOS microchips for memristive applications, Nature 618, 57-62, 2023. 高被引论文
2. K. Zhu, C. Wen, A. A. Aljarb, F. Xue, X. Xu, V. Tung, X. Zhang, H. N. Alshareef, M. Lanza*, The development of integrated circuits based on two-dimensional materials, Nature Electronics 4, 775-785, 2021. 高被引论文
3. K. Zhu, B. Yuan, X. Liang, X. Jing, C. Wen, M. A. Villena, M. Lanza*, Graphene-boron nitride-graphene cross-point memristors with three stable resistive states, ACS Applied Materials & Interfaces 11, 37999-38005, 2019.
4. K. Zhu, M. R. Mahmoodi, Z. Fahimi, Y. Xiao, T. Wang, K. Bukvišová, M. Kolíbal, J. B. Roldan, D. Perez, F. Aguirre, M. Lanza*, Memristors with initial low-resistive state for efficient neuromorphic systems, Advanced Intelligent Systems 2200001, 2022.
5. K. Zhu, G. Vescio, S. González-Torres, J. López-Vidrier, J. Luis Frieiro, S. Pazos, X. Jing, X. Gao, Sui-Dong Wang, J. Ascorbe-Muruzábal, J. A. Ruiz-Fuentes, A. Cirera, B. Garrido, M. Lanza*, Inkjet-printed h-BN memristors for hardware security, Nanoscale 15, 9985-9992, 2023.
6. K. Zhu, X. Liang, B. Yuan, M. A. Villena, C. Wen, T. Wang, S. Chen, M. Lanza*, F. Hui, Y. Shi, Tristate resistive switching in heterogenous van der Waals dielectric structures, IEEE International Reliability Physics Symposium (IRPS 2019), DOI: 10.1109/IRPS.2019.8720485.
2025年
27. S. Pazos, K. Zhu, M. A. Villena, O. Alharbi, W. Zheng, Y. Shen, Y. Yuan, Y. Ping, M. Lanza*. Synaptic and neural behaviors in a standard silicon transistor. Nature 640, 69-76, 2025.
2024年
26. Y. Shen, K. Zhu, Y. Xiao, D. Waldhör, A. H. Basher, T. Knobloch, S. Pazos, X. Liang, W. Zheng, Y. Yuan, J. B. Roldan, U. Schwingenschlögl, H. Tian, H. Wu, T. F. Schranghamer, N. Trainor, J. M. Redwing, S. Das, T. Grasser, M. Lanza*, Two-dimensional Materials based Transistors using Hexagonal Boron Nitride Dielectrics and Metal Gate Electrodes with High Cohesive Energy, Nature Electronics 7, 856-867, 2024.
25. S. Pazos, X. Xu, T. Guo, K. Zhu, H. N. Alshareef, M. Lanza*, Solution-processed memristors: performance and reliability, Nature Reviews Materials 9, 358-373, 2024.
24. T. Han, F. Aguirre, K. Zhu, B. Yuan, S. Pazos, N. Zhang, Sui-dong Wang, S. Li, M. Lanza*, Fully 2D Materials-Based Resistive Switching Circuits for Advanced Data Encryption, Advanced Functional Materials 2403029, 2024.
23. B. Yuan, K. Zhu, T. Han, S. Pazos, M. Lanza*, All-2D materials-based 1T1M cells with threshold switching for electronic neurons., Microelectronic Engineering 294, 112247, 2024.
22. R. Tao*, H. Vovusha, X. Li, R. Melentiev, K. Zhu, M. Lanza, U. Schwingenschlögl, A. K. Tevtia, G. Lubineau*, Characterizing ABS–copper chemistry-dependent adhesion: From the atomic to macro level, Journal of Materials Research and Technology 29, 4384-4393, 2024.
2023年
21. S. Pazos, X. Xu, T. Guo, K. Zhu, H. N. Alshareef, M. Lanza*, Solution-processed memristors: a device performance and reliability perspective, International Electron Devices Meeting (IEDM 2023), DOI: 10.1109/IEDM45741.2023.10413883.
20. T. Swoboda, X. Gao, C. M. M. Rosário, F. Hui, K. Zhu, Y. Yuan, S. Deshmukh, Ç. Köroǧlu, E. Pop, M. Lanza, H. Hilgenkamp, M. M. Rojo*, Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability, ACS Applied Electronic Materials 5, 5025-5031, 2023.
19. C. Acal, D. Maldonado, A. M. Aguilera, K. Zhu, M. Lanza*, J. B. Roldán*, Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient, ACS Applied Materials & Interfaces 15, 19102-19110, 2023.
18. S. Pazos, T. Becker, M. A. Villena, W. Zheng, Y. Shen, Y. Yuan, O. Alharbi, K. Zhu, J. B. Roldán, G. Wirth, F. Palumbo, M. Lanza*, High-temporal-resolution characterization reveals outstanding random telegraph noise and the origin of dielectric breakdown in h-BN memristors, Advanced Functional Materials 2213816, 2023.
17. S. Pazos, W. Zheng, T. Zanotti, F. Aguirre, T. Becker, Y. Shen, K. Zhu, Y. Yuan, G. Wirth, F. M. Puglisi, J. B. Roldán, F. Palumbo, M. Lanza*, Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller, Nanoscale 15, 2171–2180, 2023.
2022年
16. P. Kumar, K. Zhu, X. Gao, Sui-Dong Wang, M. Lanza*, C. S. Thakur*, Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing, npj 2D Materials and Applications 6, 8, 2022.
15. Y. Liu, K. Zhu, F. Hui, B. Yuan, C. Zhang, Y. Ma, X. Zhang, M. Lanza*, Inkjet Printing: A Cheap and Easy-to-Use Alternative to Wire Bonding for Academics, Crystal Research & Technology 57, 2100210, 2022.
2021年
14. J. Liu, E. Aydin, J. Yin, M. D. Bastiani, F. H. Isikgor, A. U. Rehman, E. Yengel, E. Ugur, G. T. Harrison, M. Wang, Y. Gao, J. I. Khan, M. Babics, T. G. Allen, A. S. Subbiah, K. Zhu, X. Zheng, W. Yan, F. Xu, M. F. Salvador, O. M. Bakr, T. D. Anthopoulos, M. Lanza, O. F. Mohammed, F. Laquai, S. D. Wolf*, 28.2%-efficient, outdoor-stable perovskite/silicon tandem solar cell, Joule 5, 1-18, 2021. 高被引论文
13. W. Zheng, F. Saiz, Y. Shen, K. Zhu, Y. Liu, C. McAleese, B. Conran, X. Wang, M. Lanza*, Defect-free metal deposition on two-dimensional materials via inkjet printing technology, Advanced Materials 2104138, 2021.
12. M. Lanza*, R. Waser, D. Ielmini, J. J. Yang, L. Goux, J. Suñe, A. J. Kenyon, A. Mehonic, S. Spiga, V. Rana, S. Wiefels, S. Menzel, I. Valov, M. A. Villena, E. Miranda, X. Jing, F. Campabadal, M. B. Gonzalez, F. Aguirre, F. Palumbo, K. Zhu, J. B. Roldan, F. M. Puglisi, L. Larcher, Tuo-Hung Hou, T. Prodromakis, Y. Yang, P. Huang, T. Wan, Y. Chai, K. L. Pey, N. Raghavan, S. Dueñas, T. Wang, Q. Xia, S. Pazos, Standards for the characterization of endurance in resistive switching devices, ACS Nano 15, 17214-17231, 2021.
11. Y. Shen, W. Zheng, K. Zhu, Y. Xiao, C. Wen, Y. Liu, X. Jing, M. Lanza*, Variability and yield in h-BN-based memristive circuits: the role of each type of defect, Advanced Materials 2103656, 2021.
10. C. Wen, X. Li, T. Zanotti, F. M. Puglisi, Y. Shi, F. Saiz, A. Antidormi, S. Roche, W. Zheng, X. Liang, J. Hu, S. Duhm, J. B. Roldan, T. Wu, V. Chen, E. Pop, B. Garrido, K. Zhu, F. Hui, M. Lanza*, Advanced Data Encryption using 2D Materials, Advanced Materials 2100185, 2021. 封面文章
9. X. Li, T. Zanotti, T. Wang, K. Zhu, F. M. Puglisi, M. Lanza*, Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study, Advanced Functional Materials 2102172, 2021.
2020年
8. T. Becker, X. Li, P. Alves, T. Wang, K. Zhu, Y. Xiao, G.n Wirth, M. Lanza*, An Electrical Model for Trap Coupling Effects on Random Telegraph Noise, IEEE Electron Device Letters 41, 1596, 2020.
7. T. Wang, Y. Shi, F. M. Puglisi, S. Chen, K. Zhu, Y. Zuo, X. Li, X. Jing, T. Han, B. Guo, K. Bukvišová, L. Kachtík, M. Kolíbal, C. Wen, M. Lanza*, Electroforming in metal-oxide memristive synapses, ACS Applied Materials & Interfaces 12, 11806, 2020.
6. Y. Zuo, H. Lin, J. Guo, Y. Yuan, H. He, Y. Li, Y. Xiao, X. Li, K. Zhu, T. Wang, X. Jing, C. Wen, M. Lanza*, Effect of the pressure exerted by probe station tips in the electrical characteristics of memristors, Advanced Electronic Materials 1901226, 2020.
5. C. Metzke, W. Frammelsberger, J. Weber, F. Kühnel, K. Zhu, M. Lanza, Günther Benstetter*, On the limits of scanning thermal microscopy of ultrathin films, Materials 13, 518, 2020.
2019年
4. M. A. Villena, F. Hui, X. Liang, Y. Shi, B. Yuan, X. Jing, K. Zhu, S. Chen, M. Lanza*, Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials, Microelectronics Reliability 102, 113410, 2019.
3. M. Lanza*, H.-S. P. Wong, E. Pop, D. Ielmini, D. Strukov, B. C. Regan, L. Larcher, M. A. Villena, J. J. Yang, L. Goux, A. Belmonte, Y. Yang, F. M. Puglisi, J. Kang, B. Magyari-Köpe, E. Yalon, A. Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, Tuo-Hung Hou, B. Hudec, D. Akinwande, R. Ge, S. Ambrogio, J. B. Roldan, E. Miranda, J. Suñe, K. L. Pey, X. Wu, N. Raghavan, E. Wu, W. D. Lu, G. Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M. C. Lemme, M. Liu, S. Long, Q. Liu, H. Lv, A. Padovani, P. Pavan, I. Valov, X. Jing, T. Han, K. Zhu, S. Chen, F. Hui, Y. Shi, Recommended methods to study resistive switching devices, Advanced Electronic Materials 1800143, 2019. 高被引论文
2018年
2. F. Hui, M. A. Villena, W. Fang, Ang-Yu Lu, J. Kong, Y. Shi, X. Jing, K. Zhu, M. Lanza*, Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices, 2D Materials 5, 031011, 2018.
1. B. Wang, N. Xiao, C. Pan, Y. Shi, F. Hui, X. Jing, K. Zhu, B. Guo, M. A. Villena, E. Miranda, M. Lanza*, Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices, Crystal Research and Technology 53, 1800006, 2018.
