蒋玉龙中文主页--论文成果

教授

所在单位：微电子学院
学历：研究生毕业
性别：男
学位：博士学位
职称：教授
在职信息：在职
学科：微电子学与固体电子学

论文成果

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[16] Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts -IEEE Electron Device Letters -2019-01-01 -40
[17] Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact -IEEE Electron Device Letters -2019-01-01 -40
[18] Optimization of Ni(Pt)/Si-cap/SiGe Silicidation for pMOS Source/Drain Contact -IEEE Transactions on Electron Devices -2017-01-01 -64
[19] Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrat... -IEEE Transactions on Electron Devices -2018-01-01 -65
[20] Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrat... -IEEE Transactions on Electron Devices -2018-01-01 -65
[21] Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10-10Ω·cm2contact resistivity a... -Technical Digest - International Electron Devices Meeting, Iedm -2018-01-01
[22] Nickel silicide formation on Si(110) substrate -Iwjt-2010: Extended Abstracts - 2010 International Workshop on Junction Technology -2010-01-01
[23] Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact -CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) -2010-01-01 -27
[24] Electrical Fatigue in Ferroelectric P(VDF-TrFE) Copolymer Films -IEEE Transactions on Dielectrics and Electrical Insulation -2010-01-01 -17
[25] Investigation of Co/TaN bilayer as Cu diffusion barrier -Icsict-2010 - 2010 10Th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings -2010-01-01
[26] The EL properties of well-aligned n-ZnO nanorods / p-GaN structure -Icsict-2010 - 2010 10Th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings -2010-01-01
[27] A proposal of trapezoid mesa trench MOS barrier schottky rectifier -Icsict-2010 - 2010 10Th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings -2010-01-01
[28] Work function modulation for TiN/Ta/TiN metal gate electrode -Icsict-2010 - 2010 10Th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings -2010-01-01
[29] 蒋玉龙, Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of ... -中国物理B：英文版 -2010-01-01 -19
[30] Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germaniu... -Applied Physics Letters -2010-01-01 -97

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