蒋玉龙中文主页--论文成果

教授

所在单位：微电子学院
学历：研究生毕业
性别：男
学位：博士学位
职称：教授
在职信息：在职
学科：微电子学与固体电子学

论文成果

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[31] Cu adhesion on tantalum and ruthenium surface: Density functional theory study -Journal of Applied Physics -2010-01-01 -107
[32] Effect of Annealing on the Gate Effective Work-Function Modulation for the Al/TiN/SiO2/P-Si Struc... -INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 -2010-01-01
[33] Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer thin fi... -Journal of Applied Physics -2011-01-01 -110
[34] Annealing induced hysteresis suppression for TiN/HfO2/GeON/p-Ge capacitor -Semiconductor Science and Technology -2011-01-01 -26
[35] 蒋玉龙, Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky ... -中国物理B（英文版） -2011-01-01 -20
[36] TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-S... -Electrochemical and Solid State Letters -2011-01-01 -14
[37] Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al/n... -Electrochemical and Solid State Letters -2011-01-01 -14
[38] High-Performance Ge MOS Capacitors by O-2 Plasma Passivation and O-2 Ambient Annealing -IEEE Electron Device Letters -2011-01-01 -32
[39] Origin of high on-state current for dopant-segregated Schottky MOSFET -PROCEEDINGS OF INTERNATIONAL CONFERENCE ON ASIC -2011-01-01
[40] 蒋玉龙, 基板弯曲对P( VDF - TrFE)铁电薄膜电学性能的影响 -功能材料与器件学报 -2011-01-01 -17
[41] Characterization of Thermal Stability of Ni(SiGe)/n-SiGe Contact Formed by Isothermal Annealing -2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) -2011-01-01
[42] Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on Low-k (k=2.5) dielectrics -2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) -2011-01-01
[43] Modulation of Schottky Barrier Height for NiSi/Si(110) Diodes Using an Antimony Interlayer -2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) -2011-01-01
[44] Germanium surface passivation and atomic layer deposition of high-k dielectrics-a tutorial review... -Semiconductor Science and Technology -2012-01-01 -27
[45] Fermi Level Depinning Failure for Al/GeO2/Ge Contacts -ECS Solid State Letters -2012-01-01 -1

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